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400 nm to 1100 nm Si Avalanche Photodiode Rise Time:0.5@ M=100 Up to 150 mW Output
400 nm to 1100 nm Si Avalanche Photodiode Rise Time:0.5@ M=100 Up to 150 mW Output
400 nm to 1100 nm Si Avalanche Photodiode Rise Time:0.5@ M=100 Up to 150 mW Output
400 nm to 1100 nm Si Avalanche Photodiode Rise Time:0.5@ M=100 Up to 150 mW Output

400 nm to 1100 nm Si Avalanche Photodiode Rise Time:0.5@ M=100 Up to 150 mW Output

SKU 6333018167
4.2
USD36.00 USD71.00

Pay in 4 interest-free payments of $9.00 Learn more

Shipping Estimate
USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Sep 25 - Sep 30

Description

Up to 150 mW Output Power

Pump Source for Raman Amplifier

with excellent production performance

a pin photodiode

Coherent Telecommunication Systems

400 nm to 1100 nm Si Avalanche Photodiode Rise Time:0.5@ M=100 Up to 150 mW OutputUSE INUltra weak Pulse Optical DetectionLidarLaser Ranging Fiber Optic Sensor, OTDRHigh Resolution Optical Coherence TomographyScientific Analysis and Experiment Lead Time: 1 WeekDatasheet

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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