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· Average field-effect mobility (back gating): >1000 cm2/V
161902 (2013)
· Maximum drain-source current density: 107A
· Sheet Resistance on SiO2/Si: 450±40 Ohms/sq (1cm x1cm)
healthcare and industrial safety applications
Monolayer Graphene on 90 nm SiO₂/Si Chose Your Size:10 mm x 10 mm - Pack 4 units · Average field-effect mobility (backMonolayer Graphene on 90 nm SiO Si Fully Covered Processed in ISO 7 Cleanroom Our monolayer graphene on SiO Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO Si (90nm) by a semi dry transfer process. We consider it to be a benchmark product in the graphene market not only for its excellent quality, but also for its shape, size and number of applications. Graphene Film Growth method: CVD
