GFET-S20 for Sensing applications GFET - 3 layer: 126±6 Ohms/sq

- 3 layer: 126±6 Ohms/sq (1cm x 1cm)

and it is compatible with measurements in a liquid medium

· Resistivity of Si substrate: 1-10 Ω

· Carbon: 49 – 56%

thermal interface materials

GFET-S20 for Sensing applications GFET - 3 layer: 126±6 Ohms/sqGFET S20 (Die size 10 mm x 10 mm) Processed in ISO 7 Cleanroom The GFET S 20 chip from Graphenea is designed for measurements in liquid medium. The new version provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non encapsulated electrode at the center of the chip, which allows liquid gating without the need of