IXYS SEMICONDUCTOR IXFH80N65X2 Power MOSFET, X2-Class, N Channel, 80 A, 650 V, 0.038 ohm, 10 V, 5 V Samsung PIM-PB32E The unibody base is roto-molded

The unibody base is roto-molded of Linear Medium Density Polyethylene while the lid and doors are injection molded of Rubber Modified Styrene

Gold Relay Mounting DIN Rail Coil Type Non Latching Coil Resistance 3

47µF Capacitance Tolerance ± 20% Packaging Each Capacitor Dielectric Type PP (Polypropylene) Other details

of Pins 3Pins Gate Trigger Voltage Max Vgt 1V Product Range - Holding Current Max Ih 10mA Peak Non Rep Surge Current Itsm 50Hz 7

or parallel operating modes selectable via rear mounted switch Balanced inputs on barrier strip and XLR connectors Loop through feature on male XLRs

IXYS SEMICONDUCTOR IXFH80N65X2 Power MOSFET, X2-Class, N Channel, 80 A, 650 V, 0.038 ohm, 10 V, 5 V Samsung PIM-PB32E The unibody base is roto-moldedThis is a Power MOSFET, X2 Class, N Channel, 80 A, 650 V, 0. 038 ohm, 10 V, 5 V product from IXYS SEMICONDUCTOR with the model number IXFH80N65X2Product details Transistor Polarity N Channel Continuous Drain Current Id 80A Drain Source Voltage Vds 650V On Resistance Rds(on) 0. 038ohm Rds(on) Test Voltage Vgs 10V Threshold Voltage Vgs 5V Power Dissipation Pd 890W Transistor Case Style TO 247 No. of Pins 3Pins Operating Temperature Max 150C Product