DIODES INC ZTX851 Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 1.2 W, 5 A, 200 hFE Sensei FWM-7282 Delicate effect with contained highlight

Delicate effect with contained highlight flare

to 1600' (500 m) at full rate Ethernet: patch or crossover

500GB Capacity

of Poles 3 Pole Load Current Inductive 25A Contact Configuration 3NO Switching Power AC3 11kW Switching Power AC1 11kW Other details

UPC: 700604840667

DIODES INC ZTX851 Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 1.2 W, 5 A, 200 hFE Sensei FWM-7282 Delicate effect with contained highlightThe ZTX851 is a 60V E Line Silicon NPN Planar Medium Power High Current Transistor with optimised chip technology to give exceptionally high current capability coupled with very low saturation voltages. Very low saturation voltage Applications Lighting Product details Power Dissipation Pd 1. 2W DC Collector Current 5A Collector Emitter Voltage V(br)ceo 60V Transition Frequency ft 130MHz Operating Temperature Max 200C Transistor Polarity NPN DC Current