STMICROELECTRONICS TIP29C Bipolar (BJT) Single Transistor, NPN, 100 V, 30 W, 1 A, 75 hFE Tutorials 75 cm) of vertical extension

75 cm) of vertical extension isn't enough

Made For Digital or Photographic Prints

0 g) Packaging Info Box Dimensions (LxWxH) 10

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Bifurcated crossbar Ag (Au-Alloy) contact

STMICROELECTRONICS TIP29C Bipolar (BJT) Single Transistor, NPN, 100 V, 30 W, 1 A, 75 hFE Tutorials 75 cm) of vertical extensionThe TIP29C is a 100V NPN Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. Well controlled hFE parameter for increased reliability Collector base voltage (Vcbo = 100V) Emitter base voltage (Vcbo = 5V) Applications Audio,