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VISHAY SIHD7N60E-GE3 Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V MuxLab 500423 3G/HS/SD-SDI loop through

SKU 5493123570
4.2
USD206.68 USD229.68

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Ships within 48 hours · Estimated delivery Aug 9 - Aug 14

Description

3G/HS/SD-SDI loop through

The Singh-Ray 75 x 120mm George Lepp 1

-45 dB (talk-back microphone) Power Output 1

UPC: 719821288565

of Comparators 1 Operating Temperature Min -40°C Supply Voltage Range 9

VISHAY SIHD7N60E-GE3 Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V MuxLab 500423 3G/HS/SD-SDI loop throughThis is a Power MOSFET, N Channel, 7 A, 650 V, 0. 5 ohm, 10 V, 2 V product from VISHAY with the model number SIHD7N60E GE3Product details Power Dissipation Pd 78W Operating Temperature Max 150C Continuous Drain Current Id 7A Transistor Polarity N Channel No. of Pins 3Pins Threshold Voltage Vgs 2V Product Range E Series Drain Source Voltage Vds 650V Rds(on) Test Voltage Vgs 10V Transistor Case Style TO 252 On Resistance Rds(on) 0. 5ohm MSL MSL 1

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