IXYS SEMICONDUCTOR IXFN200N10P MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7.5 mohm, 15 V, 5 V Olympus LH-40B The hot swappable cards can

The hot swappable cards can be inserted or removed even when the power is on

Manual AF Point Selection

Holding Current 900mA Automotive Qualification Standard - Operating Temperature Min -40°C Product Range PolySwitch RXEF Series Tripping Current 1

1080p 25 / 30 Return Loss: �15dB

Set the clock

IXYS SEMICONDUCTOR IXFN200N10P MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7.5 mohm, 15 V, 5 V Olympus LH-40B The hot swappable cards canThe IXFN200N10P is a N channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. Fast intrinsic rectifier Rugged polysilicon gate cell structure Encapsulating epoxy meets UL94V 0, flammability classification Rugged polysilicon gate cell structure Easy to mount High power density Space savings Applications